Abstract
Author(s): Zahra Sheykhifard
In recent years, the magneto resistance switching memory (MRSM) is used as a keyword for phenomena that comprise the non-volatile and often reversible modification of a device’s electrical resistance R, typically initiated by the application of a voltage or current pulse. In a previous study, researchers have successfully integrated spin-valve effect and electrical non-volatile memory to form a novel multifunctional spintronic device, which shows a structure of thin film. But these devices have thus far not been able to simultaneously satisfy the requirements of room temperature operation, large magnetoresistance (MR) value, small magnetic field, and simple structure. Also building a preferable multifunctional memory with considerable MR value at room temperature is a big challenge in others studies. But also our method is an alternative route for bypassing
these problems. In this work, we prepared the MoS2-based spin valve structures with lower cost and easier availabilityessential factors for MRSM devices. The MR and the I-V curves characterize the transport properties of the 2D-based spin valves structure, which exhibit both types of non-volatile memory switching, i.e., the magnetoresistance and the memristive switching. This device showing a relative giant magnetoresistance (GMR) of 6% at small magnetic field (400 mT) in the initial state at room temperature. By applying voltage pulses the overall device resistance was decreased while the relative MR increased and showing a unique tunnelling magnetoresistance (TMR) of 1000%. The device resistance could be increased to 10^5 times while the GMR was completely changed to TMR.The results reveal the possibility of integrating 2D materialsinto
the future multifunctional molecular-level spintronic device applications.
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