GET THE APP
Zinc Oxide Properties Under Different Conditions of Pressure and Temperatures a Molecular Dynamics Simulation | Abstract
AgiAl Publishing House

The Open Access Journal of Science and Technology

Abstract

About the Journal Abstracting and Indexing Aim and Scope Author Guidelines Article Processing Charges Articles in Process Contact Information Disclosure Policy and Publication Ethics Editorial Board Editorial Workflow Archive
Google Scholar citation report
Citations : 409

The Open Access Journal of Science and Technology received 409 citations as per Google Scholar report

Flyer image
Indexed In
  • Genamics JournalSeek
  • Directory of Open Access Journals
  • Pollution Abstracts
  • Publons
  • International committee of medical journals editors (ICMJE)
  • Google Scholar
  • Chemical Abstract
View More
Awards Nomination

Zinc Oxide Properties Under Different Conditions of Pressure and Temperatures a Molecular Dynamics Simulation

Author(s): Y. Chergui

Zinc oxide semiconductor is a promised material due to its properties between ionic and covalent band. In this work we investigate molecular dynamics and dl_poly_4 software to analyze the band behavior under the effect of pressures and temperatures. Our system composed of 2916 atoms in a simulation box of 9x9x9 dimension. The range of pressure is 0-200GPa and for temperature is 300-3000K, we will study the variation of the distance between ZnO atoms. Our results are in agreement with the available data due to no more information under previous conditions. This result is very important in nanosacle and macroscale especially in industry field and geophysics.

Share this article